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IPP65R190CFD7XKSA1 Infineon Mosfet High Power TO-220-3

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IPP65R190CFD7XKSA1 Infineon Mosfet High Power TO-220-3

Brand Name : Infineon

Model Number : IPP65R190CFD7XKSA1

Place of Origin : Germany

MOQ : 1PCS

Price : Negotiated Price

Payment Terms : T/T, L/C

Supply Ability : 5000 PCS+48Hours

Delivery Time : 24-72hours

Packaging Details : Tube

Infineon : IPP65R190CFD7XKSA1

Package : TO-220-3

Number of channels : 1 Channel

Vds - drain-source breakdown voltage : 650 V

Id-continuous drain current : 12 A

Pd-power dissipation : 63 W

Minimum working temperature : -40℃

Working temperature : +150℃

Packing Quantity : 500 PCS

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IPP65R190CFD7XKSA1 Infineon MOSFET HIGH POWER NEW TO-220-3

IPP65R190CFD7

IPP65R190CFD

Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Installation style: Through Hole
Package/Box: TO-220-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 650 V
Id-continuous drain current: 12 A
Rds On-drain-source on-resistance: 190 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th-gate-source threshold voltage: 4.5 V
Qg-gate charge: 23 nC
Minimum operating temperature: - 40 C
Maximum operating temperature: +150 C
Pd-power dissipation: 63 W
Channel mode: Enhancement
Package: Tube
Packing quantity: 500 PCS
Part number alias: IPP65R190CFD7 SP005413377

IPP65R190CFD7XKSA1 Infineon Mosfet High Power TO-220-3

IPP65R190CFD7XKSA1 Infineon Mosfet High Power TO-220-3


Product Tags:

IPP65R190CFD7XKSA1

      

TO-220-3 Integrated Circuit Ic

      
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